Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: A correlative study combining SE, SIMS and ECV methods
Auteurs :
Kumar C.N.S., Tabean S., Morisset A., Wyss P., Lehmann M., Haug F.J., Jeangros Q., Hessler-Wyser A., Valle N., Wirtz T., Eswara S.
Référence :
Semiconductor Science and Technology, vol. 36, n° 8, art. no. 085003, 2021
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