Electrolyte-Gated FET-based Sensing of Immobilized Amphoteric Molecules Including the Variability in Affinity of the Reactive Sites

Auteurs

Kumar N., Garcia C.P., Rezaei A., Dixit A., Asenov A., Georgiev V.

Référence

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 377-380, 2023

Description

In this work, we developed a unique computational approach that allowed us to detect immobilized amphoteric molecules on the surface of an electrolyte-gated FET-based sensor. Our simulation methodology is based on a combination of the Site-Binding and Gouy-Chapman-Stern models which are solved self-consistently. Our analytical model allows us to describe the surface charge density due to the protonation and deprotonation of the reactive sites of amphoteric molecules. Moreover, we have analyzed the effect of variability in the affinity constant of reactive sites. We also studied the effect of random dopant fluctuations in nanowire FET using in-house simulator NESS to account for the reliability issues in FET-based sensor technology.

Lien

doi:10.23919/SISPAD57422.2023.10319578