Influence of substrate stress on in-plane and out-of-plane ferroelectric properties of PZT films
Auteurs
Aruchamy N., Schenk T., Girod S., Glinsek S., Defay E., Granzow T.
Référence
Journal of Applied Physics, vol. 131, n° 1, art. no. 014101, 2022
Description
Solution-deposited ferroelectric films often are under mechanical stress due to the difference in thermal expansion coefficients between films and substrate materials. Knowledge of how stress changes the ferroelectric response under different actuation conditions is essential when selecting a substrate for film deposition. Here, a comparative study of the ferroelectric properties of lead zirconate titanate thin films on transparent fused silica glass and sapphire substrates is presented. Sapphire exerts a compressive in-plane stress on the film, favoring an out-of-plane domain orientation, while fused silica causes tensile in-plane stress and a predominantly in-plane domain configuration. As expected, the out-of-plane polarization is high under in-plane compressive stress but reduced by a factor of nearly 4 by in-plane tensile stress. In contrast, the in-plane polarization shows an unexpectedly weak stress dependence. It is larger by only about 10% under tensile stress compared to compressive stress. Permittivity increases when the major domain orientation does not coincide with the electric field. The observations are explained based on a model taking into account the crystallographic structure of the film.
