Interstitial Boron-doped TiO2 thin films: the significant effect of boron on TiO2 coatings grown by atmospheric pressure chemical vapour deposition

Auteurs

M. Quesada-Gonzalez, N. D. Boscher, C. J. Carmalt, and I. P. Parkin

Référence

ACS Applied Materials & Interfaces, vol. 8, no. 38, pp. 25024–25029, 2016

Description

The work presented here describes the preparation of transparent interstitial boron-doped TiO2 thin-films by atmospheric pressure chemical vapour deposition (APCVD). The interstitial boron-doping, on TiO2, proved by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), is shown by to enhance the crystallinity and significantly improve the photo-catalytic activity of the TiO2 films. The synthesis, highly suitable for a reel-to-reel process, has been carried out in one step.

Lien

DOI: 10.1021/acsami.6b09560

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