Nitrogen incorporation during seeded sublimation growth of 4H-SiC and 6H-SiC

Auteurs

N. Tsavdaris, P. Kwasnicki, K. Ariyawong, N. Valle, H. Peyre, E. Sarigiannidou, S. Juillaguet, and D. Chaussende

Référence

Materials Science Forum, vol. 821-823, pp. 60-63, 2015

Description

We address the problem of nitrogen incorporation during bulk crystal growth of 4H-SiC and 6H-SiC by seeded sublimation method. The partial pressure of nitrogen and temperature dependence were considered in bulk SiC crystals. Free carrier concentration and incorporated nitrogen were determined using Raman spectroscopy and Secondary Ion Mass Spectrometry, respectively. The incorporated nitrogen at the (000-1) C-face of 4H-SiC and 6H-SiC is found to be independent of the polytype of the crystal. Higher desorption rate at Si-face compared to C-face is found, using a Langmuir equation, which is attributed to the difference in bond density between the two polar faces. The increased nitrogen desorption when growth temperature increases is believed to be the most contributing factor, based on the temperature dependent trends. 

Lien

doi:10.4028/www.scientific.net/MSF.821-823.60