High energy storage density and efficiency of 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 thin films on platinized sapphire substrates
Auteurs
Konsago S.W., Žiberna K., Matavž A., Mandal B., Glinšek S., Brennecka G.L., Uršič H., Malič B.
Référence
Journal of Materials Chemistry A, vol. 13, n° 4, pp. 2911-2919, 2024
Description
Manganese-doped 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (BZT–BCT) ferroelectric thin films deposited on platinized sapphire substrates by chemical solution deposition and multistep-annealed at 850 °C, are investigated. The 100 nm and 340 nm thick films are crack-free and have columnar microstructures with average lateral grain sizes of 58 nm and 92 nm, respectively. The 340 nm thick films exhibit a relative permittivity of about 820 at 1 kHz and room temperature, about 60% higher than the thinner films, which is attributed to the dielectric grain size effect. The thinner films exhibit a larger coercive field and remanent polarization of about 110 kV cm−1 and 6 mC cm−2 respectively, at 1 MV cm−1 compared to 45 kV cm−1 and 4 mC cm−2 for the thicker films. The 340 nm thick films exhibit a maximum polarization of about 47 mC cm−2 at 3.5 MV cm−1 and slim polarization loops, resulting in high energy storage properties with 46 J cm−3 of recoverable energy storage density and 89% energy storage efficiency.
