Twin-induced InSb nanosails: A convenient high mobility quantum system

Auteurs

M. de la Mata, R. Leturcq, S. R. Plissard, C. Rolland, C. Magén, J. Arbiol, and P. Caroff

Référence

Nano Letters, vol. 16, no. 2, pp. 825-833, 2016

Description

Ultra narrow bandgap III–V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12 000 cm²V^–1s^-1. Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb “nanosails” as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.

Lien

DOI: 10.1021/acs.nanolett.5b05125